GaN: Future Direction & Challenges - Navitas
Gallium NItride (GaN) must operate safely and efficiently in a high-frequency ecosystem to fulfil the promise of a WBG material, and higher-level device integration is a critical enabler. Integrating GaN FET, GaN analog and GaN logic creates a true GaN power IC. GaN power IC technology was introduced by university research in the 2009 timeframe ii.
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